郝喜红，男，1979年10月生，内蒙古察右后期人，中共党员，博士，教授，博士生导师。硕士现任内蒙古科技大学材料与冶金学院党总支书记，内蒙古自治区铁电新能源材料与器件重点实验室主任，中国仪表功能材料学会电子元件关键材料与技术专业委员会常务委员，先后荣获教育部“新世纪优秀人才”、内蒙古“草原英才“、内蒙古“321人才一层次”、内蒙古“青年科技英才领军人才”及包头市“5512领军人才“等称号。

1、工作简历

1998年9月——2002年7月年在东华理工大学无机非金属材料专业攻读学士学位；

2002年9月——2005年7月在西安建筑科技大学材料学院攻读硕士学位；

2005年9月——2008年12月在同济大学功能材料研究所攻读博士学位；

2009年1月——2010年8月在内蒙古科技大学材料与冶金学院无机非金属材料专业从事教学与科研工作，2009晋升为副教授；

2010年9月――2011年7月作为高级访问学者在清华大学材料系从事研究工作；

2011年8月――现在 内蒙古科技大学材料与冶金学院无机非金属材料专业从事教学与科研工作，2011年晋升为教授；

2017年3月――2017年12月 受中组部选派在国家行政学院青年干部培训班进行培训。

2、研究方向、科研成果

郝喜红教授的主要研究领域为：铁电及反铁电材料的储能行为、电卡致冷效应及能量收集性能的基础研究。承担国家自然科学基金、国家科技部973前期项目、教育部“新世纪优秀人才计划”、内蒙古科技创新引导计划、内蒙古“科技英才”计划及其他省部级科研项目30余项，获省部级成果奖1项，申请国家发明专利31项（授权10项目），目前在国内外相关期刊Progressin Materials Science（IF=31）、Chemical Communications、ACSApplied Materials & Interfaces、Journal of Materials Chemistry C、Applied Physics Letter、Journal of Applied Physics、Journalof the American Ceramic Society 及Journal of Physics D: Applied Physics等发表学术论文110余篇，被SCI、EI收录100余篇。

3、主要承担的科研项目

（1）内蒙古自治区教育厅高等学校科学技术研究项目(2009-2010)。

（2）武汉理工大学材料复合新技术国家重点实验室项目（2010-2011）。

（3）教育部科学技术研究重点项目(2010-2012)。

（4）教育部“春晖计划” (2009-2010)。

（5）清华大学新型陶瓷与精细工艺国家重点实验室开放课题(2010-2011。

（6）内蒙古自治区自然科学基金(2010-2012)。

（7）国家自然科学基金青年基金(2011-2013)。

（8）新疆电子信息材料与器件重点实验室开放课(2011-2012)。

（9）内蒙古自治区高等学校“青年科技英才支持计划”B+A类(2012-2014)。

(10) 2012年教育部“新世纪优秀人才计划” (2012-2014)。

（11）2013年内蒙古自治区“草原英才”计划（2013-2015）。

（12）国家自然科学基金（2015-2018）。

（13）973计划前期研究专项(2014-2016)。

（14）内蒙古自然基金杰出青年培养项目(2015-2017)。

（15）内蒙古自治区高等学校创新团队发展计划 (2016-2017)。

(16) 内蒙古“草原英才”滚动支持计划 (2017-2019)。

(17) 包头市科技局内蒙古自治区铁电新能源材料与器件重点实验室专项配套 (2017-2018)。

(18) 内蒙古自治区科技创新引导项目(2018-2019)。

 铁电及反铁电材料的储能行为、电卡致冷效应及能量收集性能的基础研究       

代表性论著

　　（1）XihongHao, Jiwei Zhai, Xi Yao, “Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O3(PLZST) antiferroelectric thin films by modified sol-gel process using a noveltin source, dibutyloxide of tin”, Journal of Sol-Gel Science and Technology, 42 (2007) 365-368.

　　（2）XihongHao, Jiwei Zhai, Xiujian Chou, Xi Yao, “The electrical properties and phase transformation of PLZST2/85/13/2 antiferroelectric thin films on different bottom electrode”, Solid State Communications, 142 (2007) 498-503.

　　（3）XihongHao and Jiwei Zhai, “Composition-dependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3antiferroelectric thin films grown on platinum-buffered silicon substrates”, Journal of Physics D: Applied Physics, 40 (2007) 7447-7453.

　　（4）XihongHao, Jiwei Zhai, Jinbao Xu, Xi Yao, “Preparation of PLZT antiferroelectric thin films on ZrO2buffered substrates”, Ferroelectrics, 357 (2007)253-258.

　　（5）XihongHao, Jiwei Zhai, Jinbao Xu, Xi Yao, “Effect of orientation on the dielectric properties of Pb0.97La0.02Zr0.95Ti0.05O3(PLZT) antiferroelectric thin films”, Ferroelectrics,357 (2007) 218-222.

　　（6）XihongHao, Jiwei Zhai, Xi Yao, “Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3antiferroelectric thin films on TiO2 buffer layer”, Materials Research Bulletin, 43 (2008) 1038–1045.

　　（7）XihongHao, Jiwei Zhai, “Low-temperaturegrowth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3antiferroelectric thin films on LaNiO3/Si substrate”, Journal of Crystal Growth, 310 (2008) 1137-1141.

　　（8）XihongHao, Jiwei Zhai, and Xi Yao, “Metalorganic chemical liquid deposited (110)-preferred LaNiO3buffer layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3antiferroelectric films”, Ceramic International, 34(2008) 1007-1010.

　　（9）XihongHao, Jiwei Zhai, Qunping Jia, Bo shen and Xi Yao, “Temperature and frequencydependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3antiferroelectric thin films on LaNiO3 bottom electrode withdifferent sheet resistance”, Journal of Physics D:Applied Physics, 41 (2008) 165403(1-6).

　　（10）XihongHao, Jiwei Zhai, and Xi Yao, “Dielectric tunable properties and relaxor behavior of (Pb0.5Ba0.5)ZrO3thin films”, Journal of the American Ceramic Society,91[12] (2008) 4112-4114.

　　（11）XihongHao, Jiwei Zhai, “Improveddielectric properties of (110)-preferred (Pb, La) (Zr, Sn, Ti)O3antiferroelectric thin films on metalorganic decomposition derived LaNiO3buffer layer”, Journal of Crystal Growth, 311 (2008)90-94.

　　（12）XihongHao, Jiwei Zhai, Xi Yao, “A comprehensive investigation on the phase transformation behaviorand electrical properties of (Pb1-xBax)ZrO3 (0≤x≤0.5) thin films”,Journal of Applied Physics, 104 (2008) 124101(1-6).

　　（13）XihongHao, Jiwei Zhai, and Xi Yao, “Dielectric properties of Pb0.97La0.02(Zr0.87-xSnxTi0.13)thin films with compositions near the morphotropic phase boundary”, Journal of the American Ceramic Society, 92[1] (2009) 286-288.

　　（14）QunpingJia, Bo Shen, Xihong Hao, Sannian Song, Jiwei Zhai, “Anomalous dielectric propertiesof Ba1−xCaxTiO3 thin films near thesolubility limit”,Materials Letters, 63 (2009) 464-466.

　　（15）LinaGao, Jiwei Zhai, Sangnian Song, Xihong Hao, Xi Yao, “Effects of CeO2buffer layer thickness on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3thin films”, Journal of Crystal Growth, 311(2) (2009)299-303.

　　（16）XihongHao, Jiwei Zhai, Xi Yao, “Improved energy storage performance and fatigue endurance ofSr-doped PbZrO3 antiferroelectric thin films”, Journal of the American Ceramic Society, 92[5] (2009) 1133-1135.

　　（17）XihongHao, Jiwei Zhai; Jichun Yang, Huiping Ren, and Xiwen Song, “Improved field-induced strainsand fatigue endurance of PLZT antiferroelectric thick films by orientationcontrol”, Phys. Status Solidi RRL, 7-8 (2009) 248-250.

　　（18）XihongHao, Jiwei Zhai, Xiwen Song, Jichun Yang, and Huiping Ren, “Fabrication andcharacterization of sol-gel derived (100)-textured (Pb0.97La0.02)(Zr0.95Ti0.05)O3thin films”, Journal of the American Ceramic Society,92[12] (2009) 3081-3083.

　　（19）XihongHao, and Jiwei Zhai, “Dielectric properties of Pb1-xBaxZrO3thin films with higher barium content”, Key EngineeringMaterials, 421-422 (2010) 199-122.

　　（20）XihongHao, Jiwei Zhai, Fen Zhou, Xiwen Song, and Shengli An, “Thickness and frequencydependence of electric-field-induced strains of sol-gel derived (Pb0.97La0.02)(Zr0.95Ti0.05)O3antiferroelectric films”, Journal of Sol-GelScience and Technology, 53 (2010) 366-371.

　　（21） Xihong Hao, Jiwei Zhai, Jing Zhou, Jichun Yang, Xiwen Song, andShengli An, “Structureand dielectric tunability of (Pb0.5Ba0.5)ZrO3thin films derived on (Sr0.95La0.05)TiO3buffer-layered substrates”, Journal of Crystal Growth,312 (2010) 667-670.

　　（22）XihongHao, Jiwei Zhai, Huiping Ren, Xiwen Song, and Jichun Yang, “Fabrication and tunabledielectric properties of magnesium-doped lead barium zirconate thin films”, Journal of the American Ceramic Society, 93[3] (2010) 646-649.

　　（23）XihongHao, Jiwei Zhai, Jing Zhou, Xiaowei Li, and Shengli An, “Enhanced dielectric propertiesof lead barium zirconate thin films by manganese doping”, Applied Surface Science, 256 (2010) 4902-4905.

　　（24）XihongHao, Jiwei Zhai, Fei Shang, Jing Zhou, and Shengli An, “Orientation-dependent phaseswitching process and strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3antiferroelectric thin films”, Journal of AppliedPhysics, 107 (2010) 116101-1-3.

　　（25）XihongHao, Zhiqing Zhang, Jing Zhou, Shengli An, and Jiwei Zhai, “Preparation and Dielectric propertiesof compositionally graded lead barium zirconate thin films”, Journal of Alloys and Compounds, 501 (2010) 358-361.

　　（26）QunpingJia, Bo Shen, Xihong Hao, Jiwei Zhai, Xi Yao, “Enhanced dielectric property from highly(100)-oriented barium zirconate titanate compositional gradient films”, Thin Solid Films, 518 (2010) e89-e92.

　　（27）XihongHao, Jiwei Zhai, Jing Zhou, Zhenxing Yue, Jichun Yang, Wenguang Zhao, andShengli An, "Structure and electrical properties of PbZrO3antiferroelectric thin films doped with barium and strontium”, Journal of Alloys andCompounds, 509 (2011) 271-275.

　　（28）XihongHao, Jiwei Zhai, Zhenxing Yue, Jing Zhou, Jichun Yang, and Shengli An, “Effect of oxide buffer layer onthe microstructure and dielectric properties of PLZST 2/87/10/3antiferroelectric thin films”, Journal of CrystalGrowth, 314 (2011) 151-156.

　　（29）XihongHao, Jiwei Zhai, Zhenxing Yue, Jing Zhou, Xiwen Song, and Shengli An, “Structure and dielectricperformance of K-doped (Pb0.5Ba0.5)ZrO3 thinfilms”, Materials Research Bulletin, 46 (2011) 420-423.

　　（30）XihongHao, Jing Zhou, and Shengli An, “Effects of PbO content on the dielectric properties and energystorage performance of (Pb0.97La0.02)(Zr0.97Ti0.03)O3antiferroelectric thin films” , Journal of the AmericanCeramic Society, 94[6] (2011) 1647-1650.

　　（31）YunyingLiu, Xihong Hao*, Jing Zhou, Jibao Xu, and Shenli An, “Effects of raw materials on thestructure and dielectric properties of PbZrO3 antiferroelectric thinfilms prepared from sol-gel process”, Journal of Alloysand Compounds, 509 (2011) 8779-8782.

　　（32）XihongHao, Jiwei Zhai, Zhenxing Yue and Jinbao Xu, “Phase transformation properties of highly(100)-oriented PLZST 2/85/12/3 antiferroelectric thin films deposited onNb-SrTiO3 single-crystal substrates”,Journal of the American Ceramic Society, 94[9] (2011) 2816-2818.

　　（33）XihongHao*, Zhenxing Yue, Jinbao Xu, Shengli An,and Cewen Nan, “Energystorage performance and electrocaloric effect in (100)-preferred Pb0.97La0.02(Zr0.95Ti0.05)O3antiferroelectric thick films”, Journal of AppliedPhysics, 110 (2011) 064109-1-5.

　　（34）XihongHao*, Peng Wang, Shengli An, Jingbao Xu,and Zhenxing Yue, “Effectsof sol aging time on the microstructure and electrical properties of (Pb0.5Ba0.5)ZrO3thin films”, Journal of Alloys and Compounds, 519(2012) 37-40.

　　（35）YingWang, Xihong Hao*, and Jinbao Xu, “Effects of PbO-insert layer onthe microstructure and energy storage performance of (042)-preferred PLZTantiferroelectric thick films”, Journal of MaterialsResearch, 27 (2012) 1770-1775.

　　（36）YingWang, Xihong Hao*, Jichun Yang, Jinbao Xu, Diyi Zhao, “Fabrication and energy-storageperformance of PLZT antiferroelectric thick films derived frompolyvinylpyrrolidone-modified chemical solution”, Journalof Applied Physics, 112 (2012) 034105-1-6.

　　（37）XihongHao*, Ying Wang, Jichun Yang, Shenli An, and JinbaoXu, “Highenergy-storage performance in PLZT relaxor ferroelectric thin films”, Journal of Applied Physics, 112 (2012) 114111-1-6.

　　（38）XihongHao*, Peng Wang, Xuefeng Zhang, and JinbaoXu, “Microstructureand Improved Energy-Storage Performance of PbO-B2O3-SiO2-ZnOglass added (Pb0.97La0.02)(Zr0.97Ti0.03)O3Antiferroelectric Thick Films”, Materials ResearchBulletin, 48 (2013) 84-88.

　　（39）XihongHao*, “A review on the dielectric materials for highenergy-storage application”, JournalofAdvancedDielectrics,3 (2013) 1330001-1-14. (Invited review)

　　（40）XihongHao*, Ying Wang, Le Zhang, Liwen Zhang andShengli An, “Composition-dependentdielectric and energy-storage properties in (Pb,La)(Zr,Sn,Ti)O3antiferroelectric thick films”, Applied Physics Letter,102 (2013) 163903-1-4.

　　（41）LiwenZhang, Xihong Hao*, Jichun Yang, Shengli An, and BoSong, “Largeenhancement of energy-storage properties in compositional graded (Pb1-xLax)(Zr0.65Ti0.35)O3relaxor ferroelectric thick films”, Applied PhysicsLetter, 103 (2013) 113902-1-3.

　　（42）YunyingLiu, Xihong Hao*, and Shengli An, “Significant enhancement ofenergy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3relaxor thick films by Mn doping”, Journal of AppliedPhysics, 114 (2013) 174102-1-6.

　　（43）XihongHao, Jiwei Zhai, “Electric-fieldtunable electrocaloric effects from phase transition between antiferroelectricand ferroelectric phase”, Applied Physics Letter, 104,(2014) 022902-1-4.

　　（44）XihongHao, Jiwei Zhai, Lingbing Kong, and Zhengkui Xu, “A comprehensive review on the progress of leadzirconate-based antiferroelectric materials”, Progressin Materials Science, 63, (2014) 1-57.

　　（45）YeZhao, and Xihong Hao*, and Meiling Li, “Dielectric properties andenergy-storage performance of (Na0.5Bi0.5)TiO3thick films” , Journal of Alloys and Compounds, 601,(2014) 112-115.

　　（46）LeZhang, Xihong Hao*, and Liwen Zhang, “Enhanced energy-storageperformances of Bi2O3-Li2O added (1-x)(Na0.5Bi0.5)TiO3-xBaTiO3thick films” , Ceramic International, 40, (2014)8847-8851.

　　（47）YeZhao, Xihong Hao*, and Qi Zhang, “Energy-storage properties andelectrocaloric effects of Pb(1-3x/2)LaxZr0.85Ti0.15O3antiferroelectric thick films”, ACS AppliedMaterials & Interfaces, 6, (2014) 11633-11639.

　　（48）Ye Zhao,Xihong Hao*, and Qi Zhang, “A giant electrocaloric effect of Pb0.97La0.02(Zr0.75Sn0.18Ti0.07)O3antiferroelectric thick films at room temperature”, Journal of Materials Chemistry C, 3(2015) 1694-1699.

　　（49）XihongHao*, Ye Zhao, and Qi Zhang, “Phase structure tunedelectrocaloric effect and pyroelectric energy harvesting performance of (Pb0.97La0.02)(Zr,Sn,Ti)O3antiferroelectric thick films” , the Journal of Physical Chemistry C, 119(2015) 18877-18885.

　　（50）Qiwei Zhang, Ke Chen, Leilei Wang, Haiqin Sun, XushengWang,andXihong Hao, “A highly efficient, orange light-emitting (K0.5Na0.5)NbO3:Sm3+/Zr4+lead-free piezoelectric material with superior water resistance behavior”, Journal of Materials Chemistry C, 3 (2015) 5275-5284.

　　（51）Qiwei Zhang,Xuewen Zheng, Haiqin Sun,Wenqing Li,Xusheng Wang,Xihong Hao*, and Shengli An, “Dual-mode luminescence modulation upon visible light-drivenphotochromic with high contrast for inorganic luminescence ferroelectrics”, ACS Applied Materials & Interfaces, 8 (2016)4789-4794.

　　（52）Ye Zhao,Hongcheng Gao, Xihong Hao*, andQi Zhang, “Orientation-dependentenergy-storage performance and electrocaloric effect in PLZST antiferroelectricthick films”, Materials Research Bulletin, 84(2016) 177-184.

　　（53）HongchengGao, Ningning Sun, Yong Li, Qiwei Zhang, Xihong Hao*, Ling Bing Kong, Qing Wang, “Enhanced electrocaloric effectand energy-storage performance in PBLZT films with various Ba2+content”, Ceramic International, 42(2016) 16439-16447.

　　（54）Liming Chen,Yong Li, Qiwei Zhang, and Xihong Hao*, “The electricalproperties and energy-storage performance of (Pb0.92Ba0.05La0.02)(Zr0.68Sn0.27Ti0.05)O3antiferroelectric thick films prepared by tape-casing method”, Ceramic International, 42 (2016) 12537-12542.

　　（55）QiweiZhang, Yao Zhang, Haiqin Sun*, QiSun, Xusheng Wang, Xihong Hao, Shengli An, “Thephotoluminescence，photochromismand reversible luminescence modulation behavior for Sm doped Na0.5Bi2.5Nb2O9ferroelectrics”，Journal of the European CeramicSociety, 37 (2017) 955-966.

　　（56）QiweiZhang,Shuangshuang Yue, Haiqin Sun, Xusheng Wang,Xihong Hao,and Shengli An, “Nondestructive up-conversionreadout in Er/Yb co-doped Na0.5Bi2.5Nb2O9-basedoptical storage materials for optical data storage device applications”, Journalof Materials Chemistry C,5 (2017) 3838-3847.

　　（57）Haiqin Sun,Jian Liu,Xusheng Wang,Qiwei Zhang,Xihong Hao andShengli An, “(K,Na)NbO3ferroelectrics: A new class of solid-state photochromic materials withreversible luminescence switching behavior”, Journal of Materials Chemistry C, 5 (2017) 9080-9087.

　　（58）Yong Li,Ningning Sun, Xiaowei Li, Jinhua Du, Liming Chen, Hongcheng Gao, Xihong Hao*, and Maosheng Cao*, “Multiple electrical response and enhanced energystorage induced by unusual coexistent-phase structure in relaxor ferroelectriccomposites”, Acta Materialia, 146 (2018)202-210.

　　（59）Yao Zhang,Jian Liu, Haiqin Sun,Dengfeng Peng, Ruihong Li, Chaoke Bulin,Xusheng Wang, Qiwei Zhang, and Xihong Hao, “Reversible luminescencemodulation of Ho doped K0.5Na0.5NbO3piezoelectrics with high luminescence contrast” , Journal of the American Ceramic Society, 101 (2018) 2305-2312.

　　（60）LimingChen, Ningning Sun, Yong Li, Liwen Zhang, Qiwei zhang, and Xihong Hao*, “Multifunctional antiferroelectric multilayer ceramic capacitors withhigh energy-storage properties and large field-induced strain”, Journal of the American Ceramic Society, 101 (2018)2313-2320.

　　（61）Yong Li, Ningning Sun, JiaLiu, Xihong Hao*, Jinhua Du, Huijing Yang,Xiaowei Li, Maosheng Cao, “Multifunctional BiFeO3 composites: Absorption attenuationdominated effective electromagnetic interference shielding and electromagneticabsorption induced by multiple dielectric and magnetic relaxations”, Composites Science and Technology, 159 (2018) 240-250.

　　（62）Xiaxia Cui, Yong Li,Ningning Sun, Jinhua Du, Xiaowei Li, Huijing Yang, Xihong Hao*,“Double perovskite Bi2FeMoxNi1-xO6thin films: Novel ferroelectric photovoltaic materials with narrow bandgap andenhanced photovoltaic performance”, Solar EnergyMaterials and Solar Cells, 187 (2018) 9-14.