One-dimensional nanostructured SnO2 has attracted intense research interest due to its advantageous properties, including a large surface-to-volume ratio, high optical transparency and typical n-type properties. However, how to fabricate high-performance and multifunctional electronic devices based on 1D nanostructured SnO2 via low-cost and efficient preparation techniques is still a huge challenge. In this work, a low-cost, one-step electrospun technology was employed to synthesize the SnO2 nanofiber (NF) and nanotube (NT) arrays. The electrical and photoelectrical parameters of SnO2 NTs-based devices were effectively controlled through simple changes to the amount of Sn in the precursor solution. The optimal 0.2 SnO2 NTs-based field effect transistors (FETs) with 0.2 g SnCl2*4H(2)O per 5 ml in the precursor solution exhibit a high saturation current (similar to 9 x 10(-5) A) and a large on/off ratio exceeding 2.4 x 10(6). Additionally, 0.2 SnO2 NTs-based FET also exhibit a narrowband deep-UV photodetectivity (240-320 nm), including an ultra-high photocurrent of 307 mu A, a high photosensitivity of 2003, responsibility of 214 A W-1 and detectivity of 2.19 x 10(13) Jones. Furthermore, the SnO2 NTs-based transparent photodetectors were as well be integrated with fluorine-doped tin oxide glass and demonstrated a high optical transparency and photosensitivity (similar to 199). All these results elucidate the significant advantages of these electrospun SnO2 NTs for next-generation multifunctional electronics and transparent photonics.