Two-dimensional aluminum (Al) nanowire (NW) networks offering transparent conductors were fabricated by simple wet etching of Al metalized polymer film using a polystyrene (PS) nanofiber (NF) mask template. NW networks-500 nm in width, 50 nm in thickness, and with an area fraction of 22.0%- was prepared by electrospinning PS with 283 nm in diameter on a metalized film, bonding the NF to the film by annealing at 200 degrees C, etching unmasked Al and then dissolving the PS mask. The NW width and the area fraction of Al NW network can be controlled readily by the NF diameter and the deposition time of PS NF mask, respectively. The NW networks thus prepared are flexible and exhibit 80% optical transmittance and sheet resistance of 45 Omega sq(-1), indicating that they can be an indium-tin oxide (ITO) replacement. (C) 2013 Elsevier B.V. All rights reserved.