This paper presents the findings of research into field effect transistors (FET) based on aluminum doped zinc oxide (AZO) nanowires that resulted in developing an effective field-effect channal conductivity control method implemented by intensive modulation of charge carriersmobility. AZO (Al similar to 2% at.) nanowires were fabricated by electrospinning technique, and the obtained nanocrystalline nanowires had diameter of 150 - 200 nm and average grain size of similar to 10 nm. FET was assembled using AZO nanowires with back side gate configuration and demonstrated n-type behavior and on-off current ratio up to 10(3). Using grain boundary (GB) model we have found electron concentration in the FET channel in off-state and on-state to be 1.8.10(19) cm(-3) and 4.1.10(19) cm(-3), respectively. Meanwhile, the corresponding effective field-effect mobility changed significantly from 2.5.10(-6) cm(2)/V.s to 3.3.10(-3) cm(2)/V.s. Mobility change (similar to 10(3)) was attributed to lowering of potential barrier inside GB. Areal trap concentration was estimated as 3.10(13) cm(-2) and donor concentration as 4.5.10(19) cm(-3). The results presented open up new opportunities for the developing of a new type of mobility-modulation field-effect transistors. (c) 2016 The Electrochemical Society. All rights reserved.