Precisely controlled Ni-doped SnO2 (NSO) nanobelt arrays are synthesized and assembled via electrospinning. In comparison to pristine SnO2 nanobelts, enhanced photosensitivity (similar to 10(3)) as well as recovery speed (similar to 1 s) is obtained in NSO nanobelts. The mechanism is clarified by the compensation effect of acceptor impurity Ni, which not only promotes the oxygen-surface interaction but also introduces trapping centers in SnO2 matrix. The reduced grain size (similar to 4 nm) along with increased depletion layer thickness also benefits the photosensitivity of NSO nanobelts. These improved photoresponse properties make the NSO nanobelt a promising candidate for high-performance ultraviolet detectors. (C) 2013 AIP Publishing LLC.