The temperature dependence of a Schottky diode fabricated from an electrospun doped polyaniline nanofiber on an inorganic n-doped silicon substrate has been studied in the temperature range 180 K < T < 300 K. The standard thermionic emission model of a Schottky junction with and without a series resistance was utilized to analyze the data. No significant difference in the values of the device parameters were observed via the use of either method. Charge transport in the ON state of the diode was compared to that in an isolated electrospun doped polyaniline nanofiber and the temperature dependence of the diode resistance was seen to deviate from the quasi 1-D variable range hopping that characterizes charge transport in doped polyaniline. The constrained diode architecture permits the simultaneous existence of multiple charge transport mechanisms under normal operating conditions making this an interesting system for further study. (c) 2007 Elsevier B.V All rights reserved.