One-dimensional metal-oxide nanofibers show great promise as the basis for nano-device platforms due to their large surface to volume ratio and unique electrical properties. Here, we represent the facile fabrication of p-type CuO nanofibers utilizing the electrospinning technique for field-effect transistors (FETs), which incorporate CuO nanofibers as a channel and high-kappa Al2O3 as a dielectric layer. The FETs exhibit typical p-type characteristics with a high hole mobility of 3.5 cm(2)/Vs at a low operating voltage of 4V, fast switching speed, and modulation of light emission over the external light-emitting diode. Published by AIP Publishing.