Electrospun p-type CuO nanofibers for low-voltage field-effect transistors-易丝帮

Electrospun p-type CuO nanofibers for low-voltage field-effect transistors

2019/11/27 21:19:19 Zhu, H. H., A. Liu, G. X. Liu and F. K. Shan

One-dimensional metal-oxide nanofibers show great promise as the basis for nano-device platforms due to their large surface to volume ratio and unique electrical properties. Here, we represent the facile fabrication of p-type CuO nanofibers utilizing the electrospinning technique for field-effect transistors (FETs), which incorporate CuO nanofibers as a channel and high-kappa Al2O3 as a dielectric layer. The FETs exhibit typical p-type characteristics with a high hole mobility of 3.5 cm(2)/Vs at a low operating voltage of 4V, fast switching speed, and modulation of light emission over the external light-emitting diode. Published by AIP Publishing.

Journal: Applied Physics Letters
Volume: 111
Issue: 14
Pages:
ISSN: 0003-6951
DOI: 10.1063/1.4998787
Year: 2017
Number:
Type:

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